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通过实验分析了大直径直拉硅片中间隙氧含量对原生新微缺陷的影响,并对具有不同间隙氧含量的硅片进行热处理实验。结果发现间隙氧含量影响到晶体中新微缺陷的密度,通过高温退火可显著降低微缺陷的密度。
The effects of interstitial oxygen content in large diameter Czochralski silicon on the original new microdefects were analyzed experimentally, and the heat treatment experiments on silicon wafers with different interstitial oxygen contents were carried out. The results showed that interstitial oxygen content affected the density of new micro-defects in the crystal, and the density of micro-defects was significantly reduced by high-temperature annealing.