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在GaAs单片微波集成电路(MMIC)设计中,准确的器件模型对于提高电路设计成功率和缩短电路研发周期起着重要作用。首先采用标准的GaAs MMIC工艺制造出不同栅指数和单位栅宽的开关PHEMT器件,然后对加工的开关电路在“开”态(Vgs=0 V)和“关”态(Vgs=-5 V)进行宽频率范围内的测量,基于测量结果建立起一个参数化的GaAs PHEMT开关等效电路模型,最后通过单刀单掷(SPST)开关来验证参数化模型。应用该参数化模型设计的电路实测与仿真结果基本吻合,证明参数化的GaAs PHEMT模型是可用的。该模型可用于30 GHz以下GaAs PHEMT工艺开关MMIC电路仿真设计。
In GaAs monolithic microwave integrated circuit (MMIC) design, accurate device model to improve the success rate of circuit design and shorten the circuit development cycle plays an important role. First of all, a PHEMT switching device with different gate index and unit gate width is fabricated by standard GaAs MMIC process. Then, the switching circuit is processed in the “on” state (Vgs = 0 V) and the “OFF” state -5 V), a parametric GaAs PHEMT switch equivalent circuit model was built based on the measurement results, and finally the parametric model was verified by a single-pole single-throw (SPST) switch. The circuit design and simulation results based on this parametric model agree well with each other, which proves the parametric GaAs PHEMT model is available. The model can be used for GaAs PHEMT process switching MMIC circuit design below 30 GHz.