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在这个面向应用的研究中,我们在从560℃到640℃温度范围内进行了磷掺杂LPCVD多晶硅膜试验,并把其结果与以前由未掺杂多晶硅膜得到的结果进行了比较。使用了X射线衍射、透射电镜、扫描电镜、喇曼散射与弹性光散射、光吸收与反射以及其他技术,来获取下述特性:晶粒尺寸、结构、结构的完整性、形变、折射指数、表面平整度和电导率等。我们发现,要获得质量最好的磷掺杂膜,必须在非晶状态(即温度不超过57o℃)下淀积;质量稍次,但对于不太关键的应用场合可以接受的膜,在580℃≤T_d(?)620℃范围内淀积。我们认为,在T_d(?)620℃淀积的膜,其质量是很差的。
In this application-oriented study, we performed a phosphorus-doped LPCVD polycrystalline silicon film test at a temperature ranging from 560 ° C to 640 ° C and compared its results with those obtained from undoped polycrystalline silicon films. X-ray diffraction, transmission electron microscopy, scanning electron microscopy, Raman scattering and elastic light scattering, light absorption and reflection, and other techniques were used to obtain the following properties: grain size, structure, structural integrity, deformation, refractive index, Surface roughness and conductivity and so on. We found that to obtain the best quality phosphorus-doped film, it must be deposited in an amorphous state (i.e., at a temperature not exceeding 57 ° C); films of lesser quality, but acceptable for less critical applications, at 580 ℃ ≤ T_d (?) 620 ℃ within the deposition. We believe that the quality of the deposited films at T_d (?) 620 & lt; 0 & gt; C is poor.