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本文介绍一种测量碳化硅半导体少数载流子寿命的方法,叙述有关的原理和测试设备,并就对测试结果有极大影响的谐振干扰、点接触的电学性质和电发光特性等问题进行了试验。提出了若干可以避兔谐振干扰、防止触点旁路并控制整流比的有效措施。推荐采用焊铟方法制备低阻接触。指出,为了保证实验结果的可靠性,测试前必须了解样品的发光特性。采用这种方法测定了若干碳化硅单晶的少数载流子寿命,测得值一般低于4.2×10~(-9)秒。
This paper presents a method to measure the minority carrier lifetime of silicon carbide semiconductors, describes the relevant principles and test equipment, and carries out the research on the resonance interference, the electrical properties of the point contact and the electroluminescent characteristics that have a great influence on the test results test. A number of effective measures have been put forward to avoid the harmonic interference, prevent the contact from bypassing and control the rectification ratio. It is recommended to use indium solder to prepare low resistance contacts. Pointed out that in order to ensure the reliability of the experimental results, we must understand the light-emitting characteristics of the sample before the test. This method has been used to determine the minority carrier lifetime of a number of silicon carbide single crystal, the measured value is generally lower than 4.2 × 10 ~ (-9) seconds.