一、引言离子注入在硅中引起的损伤对大规模(LSI)和超大规模集成电路(VLSI)来说影响很大。而离子掺杂又是制备LSI和VLSI的源、漏及发射极常用的方法。因此对于离子注入引起的损伤和缺陷的问题引起了人们的密切关注。在LSI和VISI工艺中所引起的缺陷大致可分为点缺陷、线缺陷(位错环和位错纲)、面缺陷和堆垛位错等。离子注入和离子 I. INTRODUCTION Damage caused by ion implantation in silicon can have a large impact on large-scale (LSI) and very large-scale integrated circuits (VLSI). However, ion doping is a common method for preparing source, drain and emitter of LSI and VLSI. Therefore, the problem of damage and defects caused by ion implantation has drawn people’s close attention. The defects caused in the LSI and VISI processes can be roughly divided into point defects, line defects (dislocation loops and dislocation lines), surface defects and stacking dislocations. Ion implantation and ions