论文部分内容阅读
垂直结型栅场效应晶体管是一种新型大功率器件。它们显示不同于一般场效应晶体管而类似于三极管的特性。本文应用二维数值分析研究了垂直场效应晶体管(V-FET)的类三极管的运用。这个分析表明,沟道被栅势垒耗尽对类三极管运用是一个必要条件。它也表明了栅间距 d 和栅-漏长度 l_(gd)对垂直场效应晶体管的类三极管运用有很大的影响。由类三极管到五极管特性的转变大约是通过增加 d 或 l_(gd)而引起的。雪崩击穿电压强烈地依赖于电场分布,并且这也是二维分析的很好题目。就有关类三极管的运用和击穿,讨论了垂直场效应晶体管的设计准则。
Vertical junction gate field effect transistor is a new type of high-power devices. They show characteristics similar to those of transistors, unlike normal field effect transistors. In this paper, two-dimensional numerical analysis of the vertical field-effect transistor (V-FET) of the triode application. This analysis shows that the depletion of the gate barrier is a necessary condition for triode applications. It also shows that the gate-to-gate spacing d and the gate-to-drain length l_ (gd) have a significant impact on the triode operation of vertical field effect transistors. The transition from transistor-to-transistor characteristics is probably caused by increasing d or lg (gd). The avalanche breakdown voltage strongly depends on the electric field distribution, and this is also a good topic for two-dimensional analysis. On the use of transistor-type and breakdown, discussed the vertical field-effect transistor design guidelines.