本文全面地介绍了ａ —Ｓｉ ＴＦＴ ＡＭ － ＬＣＤ 制备工艺中的湿法刻蚀。通过改变刻蚀液的配比和刻蚀条件， 达到了优化湿法刻蚀的目的。并达到了高的选择比，解决了沟道刻蚀困难的问题。而且克服了湿法刻蚀的刻蚀液配比不当出现的针孔，以及刻蚀时间过长， 渗透光刻胶的边缘出现的钻蚀。在单管器件的制备中做到了实际的应用 This article presents a comprehensive review of wet etching in the fabrication of a -Si TFT AM - LCDs. By changing the etching solution ratio and etching conditions, to achieve the purpose of optimizing wet etching. And reached a high selection ratio, to solve the problem of channel etching is difficult. But also overcomes the pinhole which is improperly prepared by the etchant of the wet etching and the erosion which occurs when the etching time is too long and the edge of the photoresist penetrates. In the preparation of single-tube device to achieve a practical application