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对一种共振隧穿弱光探测器的分子束外延生长条件进行了研究。对探测器结构进行设计,研究了不同Al束流和不同生长温度下In0.52Al0.48As材料的生长质量,结合X射线衍射及原子力显微镜测试结果确定了In0.52Al0.48As材料的最佳生长条件。研究了不同Ga束流下In0.53Ga0.47As材料的生长质量,并采用一种衬底变温的生长方法解决了恒温生长较厚In0.53Ga0.47As外延层时表面容易出现点状突起的问题,获得了平整的In0.53Ga0.47As外延表面。分别采用恒温和变温的生长方法制备了探测器样品,并对其电流-电压特性及光响应进行了测试,测试结果表明,采用变温生长方法制备的探测器样品具有更高的峰值电流和光响应。
A kind of resonant tunneling weak light detector molecular beam epitaxial growth conditions were studied. The structure of the detector was designed and the growth quality of In0.52Al0.48As was studied under different Al currents and different growth temperatures. The optimum growth conditions of In0.52Al0.48As were determined by X-ray diffraction and atomic force microscopy. . The growth quality of In0.53Ga0.47As material under different Ga currents was studied and a substrate growth temperature method was used to solve the problem that dot-like protrusions appeared on the surface when the thick In0.53Ga0.47As epitaxial layer was grown by constant temperature. The flat In0.53Ga0.47As epitaxial surface. The detector samples were prepared by the method of constant temperature and variable temperature respectively. The current-voltage characteristics and photoresponse were tested. The results show that the detector samples prepared by the method of variable temperature growth have higher peak current and higher photoresponse.