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InAs/Ga(In)SbⅡ类超晶格材料由于特殊的二型能带结构,可以通过人造低维结构获得类似于体材料的带间吸收,从而获得较高的量子效率;另外,通过调节材料参数调节能带结构,器件响应波段可调;通过能带结构设计抑制俄歇复合,获得较小的暗电流和较高的器件性能。因为以上特有的材料性能和器件特性,Sb基二类超晶格在国际上被认为是第三代红外焦平面探测器的优选材料。对二类超晶格材料的设计和器件特性进行了研究,设计了峰值波长4μm的nBn结构的中波红外探测器,在没有蒸镀抗反膜的条件下,77 K温度下测试得到的峰值探测率为2.4×1011cm Hz1/2W-1,计算得到的量子效率为47.8%,峰值探测率已经接近目前的碲镉汞中波红外探测器器件性能。研究结果充分显示了二类超晶格优越的材料和器件性能。
InAs / Ga (In) SbⅡ superlattice materials can obtain higher quantum efficiency because of the special type II band structure, which can obtain similar band-like absorption of bulk materials through artificial low-dimensional structure. In addition, by adjusting the material The parameters adjust the band structure and the response band of the device is adjustable. The Auger recombination is suppressed by the band structure design to obtain smaller dark current and higher device performance. Because of the above unique material properties and device characteristics, Sb-based second-class superlattices are internationally recognized as the preferred materials for third-generation infrared focal plane detectors. The design and device characteristics of the second-type superlattice materials are studied. A mid-wave infrared detector with nBn structure with a peak wavelength of 4 μm is designed. The peak value of the test at 77 K without vapor deposition anti-reflective film The detection rate is 2.4 × 1011cm Hz1 / 2W-1, and the calculated quantum efficiency is 47.8%. The peak detection rate is close to the current performance of the HgCdTe detector. The results show that superlattices of the second type have superior material and device performance.