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采用分子束外延(MBE)技术,在GaSb(100)衬底上外延生长InAs(4ML)/GaSb(8ML)超晶格(SLs)。研究了生长温度(400~440℃)对超晶格晶体结构和表面形貌的影响。结果表明,420℃生长的超晶格结构完整和表面粗糙度最小,其荧光光谱(PL)峰值波长在约2.54μm处,响应光谱50%截止波长在约2.4μm处。通过控制快门顺序形成InSb和混合两种界面,并发现生长温度强烈影响混合界面InAs/GaSb超晶格结构和表面形貌,而对InSb界面超晶格的影响较小。
InAs (4ML) / GaSb (8ML) superlattices (SLs) were epitaxially grown on GaSb (100) substrates by molecular beam epitaxy (MBE) The effects of growth temperature (400 ~ 440 ℃) on the crystal structure and surface morphology of superlattices were investigated. The results show that the superlattice structure grown at 420 ℃ has the smallest complete surface roughness and the highest PL peak wavelength at about 2.54μm and the response spectrum at 50% cutoff wavelength at about 2.4μm. InSb and mixed two interfaces were formed by controlling the shutter sequence. It was found that the growth temperature strongly affected the InAs / GaSb superlattice structure and surface morphology at the mixed interface, but had little effect on the InSb interface superlattice.