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提出一种测量HgCdTe量子电容谱、研究共振缺陷态的方法.利用高精度差分电容测量方法,在4.2K下测量了一系列受主浓度为3×10~(16)～4×10~(17)cm~(-3)的P型HgCdTe MIS样品的C-V曲线.对浓度约10~(17)cm~(-3)的强P型Hg_0.79Cd_0.21Te体材料样品,在C-V曲线上耗尽区和反型层交界的偏压区域观察到一个附加峰,该峰起源于导带底以上45meV的一个共振缺陷态,分析表明是氧占据Hg空位的杂质缺陷态.
A method of measuring quantum capacitance spectrum of HgCdTe and studying the resonance defect state was proposed.A series of methods for measuring the resonance defect state were studied by using a high precision differential capacitance measurement method at a density of 3 × 10 ~ (16) ~ 4 × 10 ~ (17) ) cm ~ (-3), the CV curves of P-type HgCdTe MIS samples were exhausted on the CV curves for samples of strong P-type Hg_0.79Cd_0.21Te material with a concentration of about 10 ~ (17) cm ~ (-3) An additional peak is observed in the bias region at the interface between the region and the inversion layer. The peak originates at a resonance defect state of 45 meV above the conduction band base. Analysis shows that it is an impurity-defect state in which oxygen occupies Hg vacancies.