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研究了反向衬底偏压VB下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生(GMG)电流IGMG特性,发现IGMG曲线的上升沿与下降沿随着|VB|的增大向右漂移.基于实验和理论模型分析,得出了VB与这种漂移之间的物理作用机制,漂移现象的产生归因于衬底偏压VB调节了表面电势φs在栅电压VG中的占有比重:|VB|增大时相同VG下φs会变小,φs的变化继而引发上升沿产生率因子gr减小以及下降沿产生率因子gf增大.进一步发现IGMG上升沿与下降沿的最大跨导GMR,GMF在对数坐标系下与VB成线性关系,并且随着|VB|增加而增大.由于漏电压VD在IGMG上升沿与下降沿中的作用不同,三种VD下GMR-VB曲线重合而GMF-VB曲线则产生差异.增大VD会增强gf随VG的变化,因此使得给定VB下的GMF变大.同时这却导致了更大VD下GMF-VB曲线变化的趋势减缓,随着VD从0.2 V变为0.6 V,曲线的斜率s从0.09减小到0.03.
The IGMG characteristics of gate modulation interface (GMG) current in nano N-channel MOSFETs with reverse substrate bias VB are studied. It is found that the rising and falling IGMG curves increase with | VB | Drift to the right.Based on the experimental and theoretical model analysis, the physical mechanism between VB and this drift is obtained, and the drift phenomenon is attributed to the substrate bias VB adjusting the surface potential φs in the gate voltage VG The ratio of φs increases with the increase of | VB |, and the change of φs leads to the decrease of the rising rate of birth rate gr and the increase of the falling rate gf. The maximum span of rise and fall of IGMG is further found GMR and GMF have a linear relationship with VB in the logarithmic coordinate system, and increase with | VB | .Due to the different roles of drain voltage VD in IGMG rising and falling edges, GMR-VB Curvilinear coincidences and GMF-VB curves diverge, while increasing VD increases gf with VG, thus increasing the GMF for a given VB, while at the same time this results in a slowdown of GMF-VB curve changes at greater VD As the VD changes from 0.2 V to 0.6 V, the slope s of the curve decreases from 0.09 to 0.03.