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尽管在当今的集成电路制作中的清洗仍以水洗为主流工艺 ,但Ｇｂ级器件要求的污染程度控制和 0 2 μｍ的分辨率 ,迫使采用干法气相技术。因此 ,为满足工艺要求 ,新的干法清洗技术不断涌现。许多干法紫外 (ＵＶ)清洗法采用准分子激光器 ,但经常造成晶片表面损伤 ,并且通过光热烧
Although washing is still the mainstream process in today’s integrated circuit fabrication, the level of contamination control and resolution of 0 2 μm required by Gb-class devices has forced the use of dry-gas technology. Therefore, to meet the process requirements, new dry cleaning technologies are emerging. Many dry UV methods use excimer lasers, but often cause wafer surface damage, and by photothermal burns