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电徙动失效是ＶＬＳＩ金属化系统的主要失效形式．本文提出了一种新型ＴｉＷ膜自加热结构，产生沿金属化条长方向的温度梯度．文中采用分别独立的的试验和测温金属条结构，利用电阻与温度间的线性关系精确确定金属条上的温度分布，首次从理论和实验上深入研究了电徙动失效与温度梯度间的动力学关系．实验结果表明，在２０～３５℃的温度梯度作用下，电徙动平均失效时间、空洞失效位置和电徙动电阻变化呈现新的特性
Electrical migration failure is the main form of failure of the VLSI metallization system. In this paper, a new type of TiW self-heating structure is proposed, which produces a temperature gradient along the length of the metal strip. In this paper, a separate test and temperature-measuring metal strip structure is used, and the temperature distribution on the metal strip is accurately determined by the linear relationship between resistance and temperature. The power between the electromigration failure and the temperature gradient is studied theoretically and experimentally for the first time Learning relationship. The experimental results show that under the temperature gradient of 20 ~ 35 ℃, the average failure time of electrical migration, the location of voids and the change of electrical migration resistance show new characteristics