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为了进一步降低高级器件堆叠中铜连接线的电容延迟性,我们开发了一种先进的氧杂碳化硅隔离膜(O-SiC),其介电常数为3.5,能非常有效地阻止铜的扩散。如所期望的那样,O-SiC膜可用作蚀刻和CMP的终止盖层,即需要在集成过程中防止各种等离子化学的辐射。我们检测了等离子灰化化学:O2?H2?N2,H2?N2和H2?He等离子体与O-SiC膜的相互作用,测定了膜受到的等离子损伤并检测了化学结构的变化。此外,在薄膜受到这些等离子体的辐射之后,测定了其电学性质,如泄漏电流、介电常数和介质击穿电压。结果显示,H2?He等离子灰化化学可以有效应用于O-SiC薄膜,而不会造成薄膜的关键特性退化。
In order to further reduce the capacitive delay of the copper connection in the high-level device stack, we developed an advanced oxynitride isolation film (O-SiC) with a dielectric constant of 3.5, which is very effective in stopping the diffusion of copper. As expected, O-SiC films can be used as termination cap layers for etching and CMP, ie, to prevent various plasma-chemical radiation during integration. We examined the plasma ashing chemistry: the interaction of O2-H2? N2, H2? N2 and H2-He plasmas with the O-SiC film, the plasma damage to the film and the change in chemical structure were measured. In addition, after the films were exposed to these plasma radiation, their electrical properties were measured, such as leakage current, dielectric constant and dielectric breakdown voltage. The results show that H2-He plasma ashing chemistry can be effectively applied to O-SiC films without degrading the key properties of the films.