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研究了在光刻过程中抗蚀剂膜溶剂“J-100”对 GaAs 的表面沾污。曾发现表面附近电子浓度下降是由于在 J-100中浸泡之后的热处理而引起的。沾污的深度有时达到100微米左右。虽然一些有机溶剂引起的沾污程度比 J-100要小,但是也会产生沾污。在热处理之前,对 GaAs 沾污表面稍加腐蚀或是将沾污的样品浸泡在稀 KCN 溶液中,都能够除掉这种沾污。而且,温度和时间与沾污深度的关系和浸泡在稀 CuSO_4溶液中的样品情况相同。故得出结论,沾污是由这些溶剂中所含的 Cu 原子引起的。
The surface contamination of GaAs by the resist film solvent “J-100” during photolithography was investigated. It has been found that the decrease in electron concentration near the surface is due to heat treatment after immersion in J-100. The depth of soiling sometimes reaches about 100 microns. Although some organic solvents cause less contamination than the J-100, it can also cause staining. Before the heat treatment, a slight corrosion of the GaAs-stained surface or immersion of the stained sample in a dilute KCN solution was able to get rid of this stain. Moreover, the relationship between temperature and time and soiling depth is the same as the sample immersed in dilute CuSO 4 solution. It is concluded that contamination is caused by Cu atoms contained in these solvents.