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本文主要研究了等离子体压力对射频辉光放电法沉积的非晶硅氢合金(a-Si∶H)膜的组成、结构及性能的影响.它们包括 a-Si∶H 膜的氢含量、氢的键合形式、光致发光、电导率、光电导、自由载流子寿命及传输机理.研究结果表明:等离子体压力按照气体辉光放电的 Paschen 曲线的分布对 a-Si∶H 膜的组成、结构及性能的影响是极为重要的.采用分别落在类 Paschen 曲线的高压分支和低压分支的等离子体压力来制备 a-Si∶H 膜,所得到的样品具有相应的两种类型的组成、结构与性能。文中还首次报道了一个重要的实验结果:a-Si∶H 膜的暗电导率随温度变化的 Arrhenius 曲线在410K 的温度附近发生转折的现象出现与否是与等离子体压力有关系的.文中还对这现象进行了解释.
In this paper, the effects of plasma pressure on the composition, structure and properties of a-Si: H films deposited by RF glow discharge have been studied.These include hydrogen content of a-Si: H film, hydrogen Photoluminescence, photoconductivity, free carrier lifetime and transport mechanism.The results show that the composition of a-Si:H film is determined by the distribution of Paschen curve of plasma glow discharge , Structure and performance are very important.A-Si: H films were prepared by plasma pressure falling on the high-pressure branch and low-pressure branch of the Paschen-like curve, respectively, and the obtained samples had the corresponding two types of compositions, Structure and performance. The article also reports for the first time an important experimental result: whether the phenomenon that the Arrhenius curve of the dark conductivity of the a-Si: H film changes with temperature at a temperature around 410 K is related to the plasma pressure This phenomenon is explained.