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利用研制中的硅双极晶体管设计制作了4～5千兆赫频段低噪声晶体管混合集成放大器。实验结果表明,利用这种晶体管制作C波段放大器其性能可满足一定的使用要求。初步结果为:4千兆赫频段两级放大器噪声系数4.5分贝左右,增益10分贝(±1分贝),带宽>500兆赫;5千兆赫频段两级放大器噪声系数6分贝左右。增益10分贝±1分贝),带宽>400兆赫。实验分别是在氧化铝陶瓷衬底和聚四氟乙烯玻璃纤维敷铜板上采用微带电路制作的。
Using the development of the silicon bipolar transistor design made 4 ~ 5 GHz band low-noise transistor hybrid integrated amplifier. Experimental results show that the use of this transistor C-band amplifier performance can meet certain requirements. The preliminary results are as follows: The noise figure of the two-stage amplifier in the 4 GHz band is about 4.5 dB, the gain is 10 dB (± 1 dB) and the bandwidth is> 500 MHz; the noise figure of the two-stage amplifier in the 5 GHz band is about 6 dB. Gain 10 dB ± 1 dB), bandwidth> 400 MHz. Experiments were made on alumina ceramic substrate and Teflon glass fiber copper clad laminate using microstrip circuit.