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基于金属有机化学气相沉积(MOCVD)再生长Si重掺杂的n+GaN工艺,在AlGaN/GaN高电子迁移率场效应晶体管(HEMT)中实现非合金的欧姆接触,该工艺将器件有效源漏间距缩小至1μm。结合60nm直栅工艺,制备了高电流增益截止频率(fT)的AlGaN/GaNHEMT器件。器件尺寸的缩小大幅提升了器件的直流和射频特性。漏偏压为5V下,器件的最大直流峰值跨导达到440mS/mm;栅偏压为1V时,最大漏源饱和电流密度达到1.68A/mm。根据射频小信号测试结果得到器件的fT达到175GHz,最大振荡频率(fmax)达到76GHz,研究了干法刻蚀对再生长n+GaN欧姆接触电阻的影响,同时对比分析了60nm直栅和T型栅对器件频率特性的影响。
Non-alloyed ohmic contacts are realized in AlGaN / GaN HEMTs by metal-organic chemical vapor deposition (MOCVD) re-grown Si heavily-doped n + GaN process, The pitch is reduced to 1μm. The AlGaN / GaNHEMT device with high current gain cut-off frequency (fT) was fabricated by combining 60nm gate technology. Reduced size of the device greatly enhances the DC and RF characteristics of the device. When the drain bias is 5V, the maximum DC peak transconductance of the device reaches 440mS / mm. When the gate bias is 1V, the maximum drain-source saturation current density reaches 1.68A / mm. The results show that the fT of the device reaches 175GHz and the maximum oscillation frequency (fmax) reaches 76GHz. The influence of dry etching on the ohmic contact resistance of regrowth n + GaN is studied. Effect of Gate on Frequency Characteristics of Devices.