本设备由以下系统组成:注入系统,有溅射离子源及不对称三电极加速管,能量50keV,流强4mA(N~+);电子束系统,能量45keV,功率密度10~2—10~6W/ cm~2;配备微机程序的束偏摆装置;靶材易换的磁控溅射靶;可作旋转、平移、升降等机械运动的高真空工作室(φ500×1600mm)。可进行离子注入及混合、电子束上釉及合金化、磁控溅射离子镀等工艺。该设备为材料表面改性和薄膜制备提供了新的手段。 The device consists of the following systems: injection system with sputter ion source and asymmetric three-electrode accelerating tube with 50 keV energy and 4mA (N ~ +) flow rate; electron beam system with energy of 45keV and power density of 10 ~ 2-10 ~ 6W / cm ~ 2; beam deflection device equipped with computer program; easy to target magnetron sputtering target; can be used for rotating, translation, lifting and other mechanical movement of high vacuum studio (φ500 × 1600mm). Can be ion implantation and mixing, electron beam glazing and alloying, magnetron sputtering ion plating process. The device provides a new tool for the surface modification of materials and the preparation of thin films.