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介绍了高压空间调制结终端扩展(SM-JTE)结构及其优势。结合实际的MOSFET工艺和已有的理论模型,定义了全新的4H-Si C器件TCAD仿真模型参数。首次提出了确定SM-JTE最优长度的方法。基于SM-JTE结构的4H-Si C器件具有优良的击穿特性。SM-JTE结构的长度为230μm时,SM-JTE的击穿电压可以达到16 k V。针对界面电荷对击穿特性的影响进行了系统仿真研究。仿真结果表明,正界面电荷相比负界面电荷对击穿电压的影响更大,且界面态电荷会引起击穿电压明显下降。该SM-JTE结构可以采用更短的结终端,在同样尺寸的芯片上能制作更多的器件,从而提高生产效率,降低器件成本。
The structure and advantages of high-voltage space modulation junction termination expansion (SM-JTE) are introduced. Combined with the actual MOSFET technology and the existing theoretical model, the new TC-4H model parameter of 4H-Si C device is defined. For the first time, a method of determining the optimal length of SM-JTE is proposed. 4H-Si C devices based on the SM-JTE structure have excellent breakdown characteristics. The breakdown voltage of SM-JTE can reach 16 kV when the length of SM-JTE structure is 230μm. The influence of interfacial charge on the breakdown characteristics is studied systematically. Simulation results show that the positive interfacial charge has a greater impact on the breakdown voltage than the negative interfacial charge, and the interfacial charge will cause the breakdown voltage to drop significantly. The SM-JTE architecture allows for shorter end-of-kerns and more devices on the same die size, resulting in higher production efficiency and lower device cost.