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以铝掺杂质量分数为1%、2%、3%的Zn/Al合金为靶材,采用直流反应磁控溅射技术在玻璃衬底上制备了不同铝含量ZnO:Al(AZO)透明导电薄膜。研究了衬底温度对AZO薄膜电学性能的影响;同时,研究铝掺杂量不同、电阻率相同的AZO薄膜的载流子浓度与迁移率的关系。结果表明:随着Al掺杂量的增加,薄膜最佳性能(透过率90%,电阻率6×10-4Ω·cm左右)时的衬底温度值会降低;电阻率相同的样品,1%铝掺杂的薄膜迁移率和透光率均高于2%铝掺杂薄膜的。
The ZnO / Al (AZO) transparent conductive films with different aluminum contents were prepared on glass substrates by direct current reactive magnetron sputtering with Zn / Al alloy with 1%, 2%, 3% film. The effect of substrate temperature on the electrical properties of AZO thin films was investigated. At the same time, the relationship between the carrier concentration and the mobility of AZO thin films with different aluminum dopants and the same resistivity was studied. The results show that with the increase of Al doping, the optimum substrate temperature (90% of the transmittance and resistivity of 6 × 10-4Ω · cm) will decrease. For the samples with the same resistivity, 1 The% aluminum-doped films have higher mobility and light transmittance than the 2% aluminum-doped films.