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采用对温度敏感的锑化铟(InSb)材料做基底设计了一种温控太赫兹波带阻滤波器。通过控制外部温度的高低来改变锑化铟基底的相对介电常数,从而实现对太赫兹波滤波器中心工作频率点的动态调节。计算结果表明,当温度由140 K增加到200 K时,该滤波器的中心频率从0.920 THz增加到1.060 THz,向高频方向移动了0.140 THz,且中心频率点的透射参数均小于–20 dB,获得良好的可调带阻滤波功能。
A temperature-controlled terahertz band-rejection filter was designed using a temperature-sensitive indium antimonium (InSb) substrate. The relative dielectric constant of indium antimonide substrate can be changed by controlling the external temperature so as to realize the dynamic adjustment of the operating frequency of terahertz wave filter. The calculated results show that when the temperature is increased from 140 K to 200 K, the center frequency of the filter increases from 0.920 THz to 1.060 THz, and moves to 0.140 THz in the high frequency direction. The transmission frequency of the center frequency point is less than -20 dB , Get a good adjustable band rejection filter function.