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本文从理论上分析了InGaAsP半导体激光器中能带结构对俄歇复合的影响及其对T_o的贡献,指出k·P微扰能带不适于描述俄歇复合中的(ⅰ)高能载流子和(ⅱ)低能空穴,赝势能带不适于描述Γ点附近的电子.因而提出改进的能带结构,并用它得出带-带间直接俄歇复合过程可以对T_o有主要贡献,其中不排除CHSH过程的存在,但造成T_o小的主要过程是CHCC的明确结论.同时说明采用k·p微扰能带时,由于上述(ⅰ)和(ⅱ)的后果相反而互相抵消,如能带参数取值正确,也可得出大致正确的结论.
In this paper, the influence of band structure on Auger recombination and its contribution to T_o in InGaAsP semiconductor laser are theoretically analyzed. It is pointed out that the k · P perturbation band is unsuitable for describing (i) high-energy carriers in Auger recombination and (Ii) low-energy holes, and the pseudopotential energy band is not suitable for describing the electrons near the Γ point.Therefore, an improved band structure is proposed and it is concluded that the direct band-to-band direct Auger recombination process can make a major contribution to T_o without excluding CHSH process, but the main process leading to small T_o is the definite conclusion of CHCC, and also shows that when using k · p perturbation band, the results of (i) and (ii) cancel each other oppositely, The correct value, but also draw roughly the correct conclusion.