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报道了通过隧道结将衬底的导电类型从 n型转变到 p型 ,从而可以利用 n型 Ga P作为以 n型 Ga As为衬底的 Al Ga In P发光二极管的电流扩展层 .n型电流扩展层的电阻率低于 p型电流扩展层的电阻率 ,这种结构改善了电流扩展层的作用 ,从而提高了发光二极管的光提取效率 .对 3μm Ga P电流扩展层的发光二极管 ,实验结果表明 ,隧道结发光二极管的发光功率与具有相同基本结构的传统发光二极管相比 ,2 0 m A时发光功率提高了 5 0 % ,10 0 m A时提高了 6 6 .7%
Reported that the conductivity type of the substrate is changed from n-type to p-type through a tunnel junction so that n-type Ga P can be utilized as a current spreading layer of an Al Ga In P light-emitting diode with n-type Ga As as substrate. The resistivity of the extended layer is lower than the resistivity of the p-type current spreading layer, which improves the current spreading layer and improves the light extraction efficiency of the light-emitting diode. For the light-emitting diode with 3 μm Ga P current spreading layer, the experimental result The results show that compared with the conventional light-emitting diode with the same basic structure, the light-emitting power of the tunnel junction LED increases 50% of the luminous power at 20 mA and 66.7% at 100 mA,