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研究了离子注入后推结与扩散两种掺杂方式制作保护环对拉通型硅基雪崩光电二极管(Si-APD)器件成品率的影响,对比在不同工艺条件下器件反向击穿电压、暗电流的变化情况。研究结果表明,采用离子注入后推结的方式,在注入后3h@1 100℃条件下的成品率为94%;采用扩散掺杂方式,器件成品率不超过65%。两种方式对器件反向击穿电压影响较小且暗电流抑制效果相当。离子注入后推结制备保护环的方式更适合Si-APD制程。
The influence of two kinds of doping methods such as push-on and diffusion on the yield of Si-APD devices after the ion implantation is studied. By comparing the device’s breakdown voltage under different process conditions, Dark current changes. The results show that the push-in method using ion implantation is 94% after 3h @ 100 ℃. The yield of device is not more than 65% by diffusion doping. The two methods have little effect on the reverse breakdown voltage of the device and the dark current suppression effect is equivalent. After ion implantation, the method of preparing the protection ring by push-knot is more suitable for the Si-APD process.