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我们提出并开发了一种先进的6步光掩模工艺,可用于制备有源矩阵有机发光二极管(AMOLED)中p型沟道多晶硅薄膜晶体管(TFT)面板。通过去除电源线(Vdd)和触排(bank)光处理工艺,将8步掩模简化至6步。通过6步光掩模工艺制备的p型沟道TFT,场效应迁移率可达80cm2/Vsec,亚阈值(sub-threshold)电压波动降至0.3V/dec,阈值电压约为-2V。利用6步光掩模工艺成功地获得了采用电压驱动方式的7英寸WVGA(720×480)AMOLED面板。
We propose and develop an advanced six-step photomask process that can be used to fabricate p-channel polycrystalline silicon thin film transistor (TFT) panels in active matrix organic light emitting diodes (AMOLEDs). The 8-step mask is reduced to 6 steps by removing the power line (Vdd) and bank light processing. The p-channel TFT prepared by the six-step photomask has a field-effect mobility of 80 cm2 / Vsec, a sub-threshold voltage fluctuation of 0.3 V / dec and a threshold voltage of about -2V. A 7-inch WVGA (720 × 480) AMOLED panel using a voltage-driven approach was successfully obtained using a six-step photomask process.