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p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode (LED) was produced on n-ZnO (0001) single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incor-poration of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO:Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photo-electron spectroscopy measurements. The current-voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.
The realization of band gap engineering was achieved by the incorporation of p-ZnxMg1-xO: Na / n-ZnO pn junction light emitting diode (LED) was produced on n-ZnO of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO: Na film with low resistance was obtained at 500 ° C and in which Na has taken effect evidenced by Hall and X-ray photo-electron spectroscopy measurements . The current-voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.