We report the discovery of fast growth of polycrystalline silicon films under low temperature of 200-300 C from SiCl4/H2 mixture gases by plasma enhanced chemical vapour deposition technique. The deposition rate strongly depends not only on the rf power and the flow ratio of H2/SiCl4, but also on the substrate temperature, while the crystalline fraction is mainly affected by both the rf power and the flow ratio ofH2/SiCl4. The high film-growth rate is due to the enhancement of the gas-phase reaction in SiCl4/H2 plasma. By means of adjusting the matching relation between the flow ratio of H2/SiCl4 and rf power, and optimizing the substrate temperature, we obtain the polycrystalline silicon films deposited at a higher deposition rate over 3.5 A/s, with a crystalline fraction of 75% and an average crystallite size of 400-500nm in diameter.