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用光电化学方法现场测量铜电极的开路光电压，用开路光电压的变化来反映铜的腐蚀行为及缓蚀剂ＢＴＡ的缓蚀行为。实验发现开路光电压由正变负即光响应由Ｐ型光响应转变为Ｎ型光响应表明铜电极受到Ｃｌ－的侵蚀，在铜板电极表面形成了含有ＣｕＣｌ在内的复杂相。在本文条件下从ｗ（缓蚀剂ＢＴＡ）为５×１０－６％时开始产生缓蚀作用，随着ｗ（缓蚀剂）的增加，ＣｕＢＴＡ膜变得越致密越厚，缓蚀作用越好，表现为开路光电压越来越小。并用表面电子能谱技术测试结果佐证
The photoelectrochemical method was used to measure the open circuit voltage of copper electrode in situ. The change of open circuit photovoltage was used to reflect the corrosion behavior of copper and the corrosion inhibition behavior of corrosion inhibitor BTA. The experimental results show that the open circuit voltage changes from positive to negative, that is, the light response changes from P-type to N-type. The photoresponse shows that the copper electrode is attacked by Cl- and a complex phase containing CuCl is formed on the copper electrode. Under this condition, corrosion inhibition begins when w (corrosion inhibitor BTA) is 5 × 10-6%. With the increase of w (corrosion inhibitor), the CuBTA film becomes denser and thicker, and the corrosion inhibition effect is more Well, the performance of open circuit voltage is getting smaller and smaller. And with surface electron spectroscopy test results