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用XPS研究了不同表面处理后GaAs(110)表面自体氧化层及其与GaAs衬底间的界面特性,初步探讨了自体氧化层的形成过程。
The interfacial properties of GaAs (110) autogenous oxide layers and GaAs substrates after different surface treatments were studied by XPS, and the formation of autogenous oxide layers was discussed.