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针对AlN基片CMP平坦性问题,从pH值、磨料粒度以及磨料的质量分数等方面研究了抛光液参数对抛光效果的影响。通过对AlN基片进行抛光实验,确定pH为10.5～11.5时,采用大粒径、高质量分数纳米SiO2溶胶作为磨料,有利于抛光速率的提高。利用纳米SiO2溶胶、去离子水、pH调节剂和稳定剂自主配制抛光液A,与纯水按质量比1∶5稀释后,在压力1.8MPa、转速60r/min、流速340mL/min条件下,对AlN基片进行抛光,抛光速率为0.5μm/min。抛光1.5h后,AlN基片的表面粗糙度可达28nm,表面无划痕。
In allusion to the CMP flatness of AlN substrate, the effects of polishing parameters on the polishing performance were studied from the aspects of pH value, abrasive particle size and abrasive mass fraction. By polishing the AlN substrate, it was found that when the pH value is 10.5 ~ 11.5, using a large particle size and high quality fraction nano-SiO2 sol as the abrasive, it is beneficial to improve the polishing rate. The polishing solution A was prepared by using nano-SiO2 sol, deionized water, pH adjusting agent and stabilizer, and diluted with pure water at a mass ratio of 1: 5 under the conditions of a pressure of 1.8 MPa, a rotating speed of 60 r / min and a flow rate of 340 mL / The AlN substrate was polished at a polishing rate of 0.5 μm / min. After polishing 1.5h, AlN substrate surface roughness up to 28nm, the surface without scratches.