【摘 要】
：
Tin-doped indium oxide (ITO) thin films were prepared using conventional radio frequency (RF) planar magnediation temperatures T1 (from room temperature to 400
【机 构】
：
State Key Laboratory of Plastic Forming Simulation and Die & Mould Technology
【基金项目】
：
the National Defence Science Council of China;the Excellent Ph.D Thesis Foundation of Huazhong University of Science and Technology
论文部分内容阅读
Tin-doped indium oxide (ITO) thin films were prepared using conventional radio frequency (RF) planar magnediation temperatures T1 (from room temperature to 400℃). The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR Ti, the crystalline seeds appear at TI =300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film (Rp-v) and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the films refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate (fO2), and the mole ratio of Sn/In in the samples reduces with an increase in fO2.
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