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We fabricate a kind of novel efficient blue fluorescent organic light emitting device(OLED) based on p-n heterojunctions composed of hole transporting layer(HTL) N,N ’-bis(naphthalen-1-yl)-N,N ’-bis(phenyl)-benzidine(NPB) and electron transporting layer(ETL) 4,7-diphnenyl-1,10-phenanthroline(BPhen),into which a new blue material,DNCA(a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine),is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency(η max) of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L’Eclairage(CIE) coordinates of this device change slightly from(0.13,0.27) to(0.13,0.23) as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.
We fabricate a kind of novel efficient blue fluorescent organic light emitting device (OLED) based on pn heterojunctions composed of hole transporting layer (HTL) N, N’-bis (naphthalen- 1 -yl) -N, ) -benzidine (NPB) and electron transporting layer (ETL) 4,7-diphnenyl-1,10-phenanthroline (BPhen), into which a new blue material, DNCA (a derivation of N 6, N 6, N 12, N 12-tetrap-tolylchrysene-6,12-diamine, is partially doped simultaneously, and double emitting layers are configured. With a turn-on voltage of 2.6 V at 1 cd / m 2, this type of OLED presents a maximum luminance efficiency (η max) of 8.83 cd / A at 5.818 mA / cm 2 and a maximum luminance of over 40000 cd / m 2. Meanwhile while the Commission Internationale De L’Eclairage (CIE) coordinates of this device change slightly from (0.13, 0.27 ) to (0.13,0.23) as the driving voltage increases from 3 V to 11 V. This improvement in the electroluminescent characteristics is attributed mainly to the ideal pn heterojunction which can confine and distribute excito ns evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.