为了控制区熔硅单晶的晶向偏离度,目前采用的主要手段是控制籽晶的晶向偏离度,即将激光定向后的单晶切割成一定尺寸的籽晶,经处理装在炉膛内的籽晶夹头上。该法的缺点是一旦籽晶切割成型就无法再调节晶向偏离度,装置籽晶祗能靠经验,有时晶向偏离太大,而且晶向偏离太大往往使晶体 In order to control the deviation of the crystal orientation of the molten silicon single crystal, the main method currently used is to control the degree of crystal orientation deviation, that is to say, the single crystal after the laser orientation is cut into seeds of a certain size and processed in a furnace Seed chuck. The shortcoming of this method is that once the seed crystal is cut and formed, the crystal orientation deviation can not be adjusted any more. The device seed can only rely on experience, sometimes the crystal orientation deviates too much, and the deviation of the crystal orientation is too large to make the crystal