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用高淀积速率R.F.平面磁控溅射已制备出具有极好结晶取向和表面平整度的ZnO压电薄膜.通过X-射线衍射,扫描电子显微镜,反射式电子衍射,光测量和机电测量对这些薄膜进行了详细的研究.薄膜c-轴垂直于基片.c-轴取向的标准偏离角σ小于0.5°,σ的最小值为0.35°,溅射条件为气压5×10~(-3)毛-3×10~(-2)毛(予先混合好的Ar50%+O_250%),基片温度300—350℃.厚度达48微米的ZnO薄膜已重复制得,膜的质量和平整度没有下降.这些薄膜表面的平整度类似于玻璃基片.对He-Ne6328埃线TE_0模来说,4.2微米厚薄膜的光波导损耗低至2.0分贝/厘米,溅射后不需要处理.在叉指换能器(IDT)/ZnO/玻璃和ZnO/IDT/玻璃结构两种情况下,有效表面波耦合系数大于ZnO/玻璃结构理论值的95%.
ZnO piezoelectric thin films with excellent crystal orientation and surface flatness have been prepared by high-deposition-rate RF planar magnetron sputtering and characterized by X-ray diffraction, scanning electron microscopy, reflection electron diffraction, light measurement and electromechanical measurement These films were studied in detail. The c-axis of the film is perpendicular to the substrate. The standard deviation angle σ of the c-axis orientation is less than 0.5 °, the minimum value of σ is 0.35 °, and the sputtering conditions are atmospheric pressure 5 × 10 -3 ) Hair - 3 × 10 -2 hair (pre-mixed Ar50% + O_250%), the substrate temperature 300-350 ° C. Thickness up to 48 microns of ZnO film has been obtained repeatedly, the quality of the film and the formation of The flatness of these film surfaces is similar to that of a glass substrate. For He-Ne6328 angled TE_0 mode, the 4.2 μm thick film has an optical waveguide loss as low as 2.0 dB / cm and does not require treatment after sputtering In the case of IDT / ZnO / glass and ZnO / IDT / glass structures, the effective surface-wave coupling coefficient is greater than 95% of the theoretical value of ZnO / glass structure.