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随着科学技术的不断进步,GaN基紫外材料在社会生产已经得到了广泛地应用,这项技术的充分发展,被认为是和发光二极管、激光器具有同样作用的一种器材。基于宽禁带半导体材料的GaN紫外探测器由于具有探测波长可调控性、工艺兼容性好、构造种类比较繁多等特点,现阶段它已经成为了同行界广泛研究的一个对象。GaN肖特基结构紫外探测器因为其具有很好的相应性能与很快的反应速度所以受到业界人士的如此青睐。笔者以肖特基结构探测器的不足之处作为着手点,研究并分析了这种新型的GaN肖特基结构紫外探测器。
With the continuous improvement of science and technology, GaN-based UV materials have been widely used in society. The full development of this technology is considered as a kind of equipment that has the same function as light-emitting diodes and lasers. Due to its tunable detection wavelength, good process compatibility and relatively wide variety of structures, GaN ultraviolet detectors based on wide bandgap semiconductor materials have become an object of extensive research at the present stage. GaN Schottky structure UV detector because of its good performance and fast response speed so by the industry so popular. The author of Schottky structure detector as a starting point for the lack of research and analysis of this new GaN Schottky structure UV detector.