论文部分内容阅读
利用中子嬗变掺杂(NTD)技术制备的CZSi(NTDCZSi)片在高温退火时,由于辐照缺陷与直拉硅中杂质氧的相互作用,可以加速内吸除(IG)效应的实现,获得理想的表面清洁区和体内吸杂区.本文探讨了将NTD技术与IG技术相结合的问题,并讨论了NTDCZSi IG效应机理.
In the high temperature anneal, CZSi (NTDCZSi) films prepared by the neutron transmutation doping (NTD) technology can accelerate the IG effect due to the interaction between the irradiation defects and the impurity oxygen in Czochralski silicon. Ideal surface clean area and in vivo gettering area.This paper discusses the problem of combining NTD technology with IG technology and discusses the NTDCZSi IG effect mechanism.