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在空间和核辐射环境下,电离总剂量辐射(TID)效应严重影响采用商用CMOS工艺的SRAM的可靠性和寿命。针对SRAM,设计了四种TID加固的存储单元,分析对比了四个加固单元对TID,单粒子闩锁、单粒子翻转三种SRAM中常见辐射效应的抵御水平以及加固单元的面积和速度。加固SRAM单元的抗TID水平得到极大提高,同时,抗单粒子效应水平、面积、速度也达到一定的要求。这些单元可用于实现基于商用CMOS工艺并具有高抗辐射性能的SRAM。
Ionizing total dose radiation (TID) effects seriously affect the reliability and longevity of SRAMs in commercial CMOS processes in both space and nuclear radiation environments. For SRAM, four TID-hardened memory cells are designed. The four radiation-hardened units against TID, single-cell latch, and single-cell-flip are compared and analyzed. The area and speed of the hardened cells are also analyzed. The anti-TID level of the reinforced SRAM cell is greatly improved, meanwhile, the anti-single-particle effect level, the area and the speed also reach certain requirements. These cells can be used to implement SRAMs based on commercial CMOS processes with high radiation resistance.