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采用磁控溅射法,以VO_2为溅射靶材在硅和石英基底上制备出纯VO_2晶相(B相和M相)薄膜。借助衬底上籽晶层的辅助,将VO_2薄膜沉积过程中同时进行的成核与生长过程分离成2个独立的阶段,通过籽晶层辅助生长可有效地降低了VO_2薄膜的制备温度,在低至350℃仍可制备出热敏性能较好的VO_2(B相)薄膜,并且在325℃制备了具有一定结晶度的VO_2薄膜;进一步延长了低温籽晶层辅助的VO_2薄膜的退火时间,薄膜逐渐向M相转变,可期望实现智能窗和光控开关器件中的良好应用。
The pure VO2 crystal phase (B phase and M phase) films were prepared on silicon and quartz substrates by magnetron sputtering with VO_2 as sputtering target. With the help of the seed layer on the substrate, the simultaneous nucleation and growth during the deposition of VO_2 thin film are separated into two independent stages. The growth of the VO_2 thin film can be effectively reduced by the assisted growth of the seed layer. VO_2 (B phase) thin films with good thermal sensitivity can be prepared as low as 350 ℃, and VO_2 thin films with a certain degree of crystallinity have been prepared at 325 ℃; the annealing time of VO_2 thin films assisted by low temperature seed layers has been further prolonged, The gradual transition of the film to the M phase can be expected to achieve good applications in smart windows and light-controlled switching devices.