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对碲镉汞长波和中波焦平面光伏器件进行了实时γ射线辐照效应研究,通过辐照过程中实时测试器件的电流-电压特性,发现随着辐照剂量的增加,中波器件比长波器件表现出更好的抗辐照能力.对于长波器件,随着辐照剂量的增大,能够反映器件性能的零偏电阻逐渐降低;对于中波器件,零偏电阻随着辐照剂量的增加无固定变化趋势,辐照效应主要表现在电阻-电压曲线随着辐照剂量增加出现越来越明显的扰动.根据光伏器件的暗电流机理,对长波器件的电阻-电压曲线进行数值拟合,发现辐照引起少子产生-复合寿命逐渐降低,缺陷密度逐渐增大,主要影响的电流机理为产生-复合电流.由于中波器件材料的载流子迁移率比长波器件低,掺杂浓度比长波器件高,禁带宽度几乎是长波器件的两倍,导致中波器件的辐照效应弱于长波器件,但辐照引起的电阻-电压曲线扰动说明辐照会引起中波器件噪声的增加.
The real-time γ-ray irradiation effect of mercury cadmium telluride long-wavelength and medium-wave focal plane photovoltaic devices was studied. Through real-time measurement of the current-voltage characteristics of the device during irradiation, it was found that with the increase of irradiation dose, Device shows better anti-radiation ability.For long-wave devices, as the radiation dose increases, the partial bias resistance that can reflect the performance of the device decreases gradually. For the medium-wave device, the zero-bias resistance increases with the radiation dose There is no fixed trend, and the radiation effect is mainly manifested in the more and more obvious disturbance of resistance-voltage curve with the increase of irradiation dose.According to the dark current mechanism of photovoltaic device, the resistance-voltage curve of the long-wave device is numerically fitted, It is found that the minority carrier generation is caused by irradiation - the composite life is gradually decreased and the defect density is gradually increased, and the main current mechanism is the generation-recombination current. Since the carrier mobility of the medium wave device is lower than that of the long wave device, The device has a high bandgap, which is almost double that of a long-wavelength device, resulting in a weaker radiation effect of the medium-wavelength device than that of the long-wavelength device, but the radiation-induced resistance-voltage curve perturbation shows that the radiation event Since increasing the medium wave device noise.