Thermoelectric materials have aroused widespread conce due to their unique ability to directly convert heat to elec-tricity without any moving parts or noxious
Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect tran-sistor (TFET). In this paper, a novel TFET
The phase diagram of HfO2-TiO2 system shows that when Ti content is less than 33.0 mol%,HfO2-TiO2 system is monoclinic;when Ti content increases from 33.0 mol% to
ZnO-based resistive switching device Ag/ZnO/TiN,and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN,were prepared.The effects of inserted Zn la