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使用廉价的溶剂热法制备黄铜矿结构的Cu(In_(1-x)Al_x)S_2薄膜,研究Al掺杂量对Cu(In_(1-x)Al_x)S_2薄膜的晶体结构、形貌、粗糙度和光学性能的影响。结果表明:随着Al掺杂量的增加,Cu(In_(1-x)Al_x)S_2薄膜的X射线衍射峰向高角度偏移,同时晶粒尺寸变小。Cu In S2的原位变温XRD结果显示Cu In S2在低于873 K时可以稳定存在,当温度达到873 K时Cu In S2则开始分解为In2S3和Cu2S。AFM的测试结果展示薄膜表面的粗糙度随着Al掺杂量的增加而逐步降低。紫外分光光度计的测试结果呈现Cu(In_(1-x)Al_x)S_2薄膜透过率随着Al含量的增加而逐步增加。Al/(Al+In)的量在0~0.5变化时,Cu(In_(1-x)Al_x)S_2薄膜的禁带宽度的相应变化为1.56~2.24 e V。
The Cu (In_ (1-x) Al_x) S_2 thin film with chalcopyrite structure was prepared by cheap solvothermal method. The effects of Al doping amount on the crystal structure, morphology, Roughness and optical properties. The results show that the X-ray diffraction peak of Cu (In_ (1-x) Al_x) S_2 film shifts to a high angle with the increase of Al doping amount, and the grain size decreases. In-situ temperature-programmed XRD results of Cu In S2 show that Cu In S2 is stable at temperatures below 873 K, and Cu In S2 decomposes to In2S3 and Cu2S at temperatures up to 873 K. The results of AFM show that the roughness of the film surface gradually decreases with the increase of Al doping content. The results of UV spectrophotometer show that the transmittance of Cu (In_ (1-x) Al_x) S_2 film increases gradually with the increase of Al content. The corresponding change of the forbidden band width of Cu (In_ (1-x) Al_x) S_2 thin films varies from 1.56 to 2.24 eV when the amount of Al / (Al + In) varies from 0 to 0.5.