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采用CdTe/ZnS复合钝化技术对长波HgCdTe薄膜进行表面钝化,并对钝化膜生长工艺进行了改进。采用不同钝化工艺分别制备了MIS器件和二极管器件,并进行了SEM、C-V和I-V表征分析,研究了HgCdTe/钝化层之间的界面特性及其对器件性能的影响。结果表明,钝化工艺改进后所生长的CdTe薄膜更为致密且无大的孔洞,Cd Te/HgCdTe界面晶格结构有序度获得改善;采用改进的钝化工艺制备的MIS器件C-V测试曲线呈现高频特性,界面固定电荷面密度从改进前的1.67×1011cm~(-2)下降至5.69×1010 cm~(-2);采用常规钝化工艺制备的二极管器件在较高反向偏压下出现较大的表面沟道漏电流,新工艺制备的器件表面漏电现象获得了有效抑制。
The surface passivation of long-wavelength HgCdTe thin film was performed by CdTe / ZnS composite passivation technique, and the passivation film growth process was improved. MIS devices and diode devices were fabricated by different passivation techniques. SEM, C-V and I-V characterization analyzes were performed to investigate the interfacial properties of HgCdTe / passivation layers and their effect on device performance. The results show that the CdTe thin films grown by the passivation process are more compact and have no large holes, and the order of the lattice structure of the CdTe / HgCdTe interface is improved. The CV test curves of the MIS devices prepared by the improved passivation process are presented High-frequency characteristics, the surface charge density decreased from 1.67 × 1011cm -2 to 5.69 × 1010cm -2 before modification. The diode devices prepared by the conventional passivation process were fabricated under high reverse bias voltage A large surface channel leakage current appears, and the surface leakage phenomenon of the device prepared by the new process is effectively suppressed.