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后形成栅极(RMG)化学机械抛光(CMP)是实现高k介质/金属栅的关键,决定了芯片上器件的可靠性。高去除速率、速率可控性与抑制电化学腐蚀是RMG平坦化抛光液的核心挑战。通过研究氧化剂、FA/OⅡ螯合剂和SiO_2磨料之间的配比,来控制自钝化、络合溶解及传质三个过程的动态平衡,实现高去除速率及速率可控性。实验结果表明,氧化剂体积分数和FA/OⅡ螯合剂体积分数之比为4∶3、SiO_2磨料质量分数为24%时,铝栅CMP的自钝化、络合溶解及传质三个过程之间基本达到平衡,获得了较高的去除速率和较佳的表面粗糙度,分别为286.2 nm/min和12.83 nm。按照该比例成倍加入三种化学试剂,达到了速率可控的目的。
POST-FORMING GATE (RMG) Chemical mechanical polishing (CMP) is the key to high-k dielectrics / metal gates and determines the reliability of the devices on the chip. High removal rates, rate control, and inhibition of electrochemical corrosion are central challenges for RMG planarization slurry. By studying the ratio of oxidant, FA / OⅡ chelating agent and SiO_2 abrasive, the dynamic balance of self-passivation, complexation dissolution and mass transfer was controlled to achieve high removal rate and rate controllability. The experimental results show that when the ratio of oxidant volume fraction to FA / OⅡ chelating agent volume fraction is 4: 3, and the mass fraction of SiO_2 abrasive is 24%, the self-passivation, complexation and mass transfer of the aluminum grid CMP Basically reached the equilibrium, get higher removal rate and better surface roughness, respectively 286.2 nm / min and 12.83 nm. In accordance with the ratio of double addition of three chemical reagents, to achieve the purpose of rate control.