利用蒙特卡罗(MonteCarlo)方法,对10—20MeV中子在静态随机存储器(SRAM)中引起的单粒子翻转进行了模拟,着重对中子在SRAM灵敏区引起的电离能量沉积进行了计算,并对中子引起单粒子翻转过程相关物理量进行了计算.这些计算模拟结果为了解10—20MeV中子引起SRAM单粒子翻转过程提供了详细的统计信息,为SRAM的抗辐射加固提供相关参考信息. The Monte Carlo method is used to simulate the single event inversion caused by 10-20MeV neutrons in static random access memory (SRAM). The ionization energy deposition caused by neutron in the SRAM sensitive area is emphatically studied. The relative physical quantities of the single-particle inversion caused by neutrons were calculated.These simulation results provide detailed statistical information for understanding the single-particle SRAM flip-up process caused by 10-20MeV neutrons and provide reference information for the anti-radiation reinforcement of SRAM.