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y layer in Si was investigated by cross section transmission electron microscopy and auger electron spectroscopy.
Oxygen gettering in Si by He ion implantation-induced cavity layer
【摘 要】
：
y layer in Si was investigated by cross section transmission electron microscopy and auger electron spectroscopy.
【机 构】
：
State Key Laboratory of Functional Materials for informatics
【出 处】
：
核技术（英文版）
【发表日期】
：
2004年期
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