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梗概微波功率放大器,很多设计是采用晶体管、耿氏二极管、碰撞雪崩渡越时间二极管构成的注入锁定和负阻放大器。设计这些微波功率放大器时,需要根据其输出功率、效率和散热设计等因素,有效地灵活运用有源器件的固有功率。这就要求知道,所用的具有某一固有功率的有源器件,它能够构成什么样的功率放大器。为了弄清楚这些问题,本文分析了注入锁定和负阻放大器在大信号激励时的输出功率特性,弄清楚了有源器件的固有功率和放大器的激励功率以及与被激励放大后的功率之间的关系,并求出了激励功率与有源器件固有功率之间实现完全功率合成的条件。分析时把注入锁定和负阻放大器分为反射式和通过式两种,分别求出有关振幅和相位基础方程式,并把激励功率和有源器件的固有功率代入振幅基础方程式。此外,举出实际应用以上分析结果的例子。
Summary Microwave power amplifier, many designs are the use of transistors, Gunn diodes, avalanche transit time diode impulse lock and negative resistance amplifier constituted. When designing these microwave power amplifiers, it is necessary to effectively utilize the inherent power of the active devices according to their output power, efficiency and thermal design. This requires knowledge of what kind of power amplifier it can make up using an active device of a certain intrinsic power. In order to clarify these problems, this paper analyzes the output power characteristics of the injection-locked and the negative resistance amplifier in the large signal excitation, to clarify the relationship between the intrinsic power of the active device and the excitation power of the amplifier and the amplified power Relationship, and obtained the excitation power and the active power devices to achieve the full power between the conditions of synthesis. Analysis of the injection lock and negative resistance amplifier is divided into two types of reflection and pass, respectively, to find out the basic equations of amplitude and phase, and the excitation power and the inherent power of active devices into the amplitude of the basic equation. In addition, cite examples of practical application of the above analysis results.