研究了低温(1.5K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性.研究表明,器件在零偏压下处于共振状态.通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制.所得结果可为弱耦合双量子点器件的制备提供基础. The longitudinal magnetic tunneling characteristics of weakly coupled GaAs / AlGaAs / InGaAs dual-well structures at low temperature (1.5K) were investigated. The results show that the device is in a resonant state under zero bias. By analyzing the magneto-conductive oscillations under different bias voltages, Curve, we can get the variation law of the ground state binding energy level in double quantum well with bias voltage, and then we can determine the tunneling mechanism corresponding to the tunneling current peak. The obtained results can provide the basis for the fabrication of weakly coupled double quantum dot devices.