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在有效质量近似下,考虑到外电场的影响,详细研究了直接带隙Ge/GeSi量子阱中带间光跃迁吸收系数和阈值能量随量子阱阱宽,外电场强度的变化情况.结果表明:随着外电场的增强,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象.此外,当量子阱比较大时,外电场对量子阱中带间光跃迁阈值能量的影响更加明显.
Considering the influence of external electric field, the change of absorption bandgap and the threshold energy of the bandgap in the direct bandgap Ge / GeSi quantum well with the well width and the external electric field of the quantum well are investigated in detail under the effective mass approximation.The results show that: With the enhancement of the external electric field, the intensity of light absorption in the band will be gradually weakened, the threshold energy decreases, and the absorption curve moves to the low energy direction, resulting in the phenomenon of red shift.In addition, when the quantum well is relatively large, The impact of the threshold transition energy between bands is more pronounced.